for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite.com linear & power amplifiers - chip 1 HMC-ABH241 v03.0412 gaas hemt mmic medium power amplifier, 50 - 66 ghz general description features functional diagram output ip3: +25 dbm p1db: +17 dbm gain: 24 db supply voltage: +5v 50 ohm matched input/output die size: 3.2 x 1.42 x 0.1 mm electrical speciications , t a = +25 c, vdd1= vdd2= vdd3= 5v, idd1 + idd2 + idd3= 220ma [2] typical applications this HMC-ABH241 is ideal for: ? short haul / high capacity links ? wireless lan bridges ? military & space the HMC-ABH241 is a four stage gaas hemt mmic medium power ampliier which operates between 50 and 66 ghz. the HMC-ABH241 provides 24 db of gain, and an output power of +17 dbm at 1db compression from a +5v supply voltage. all bond pads and the die backside are ti/au metallized and the ampliier device is fully passivated for reliable operation. the HMC-ABH241 gaas hemt mmic medium power ampliier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for mcm and hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes. parameter min. typ. max. units frequency range 50 - 66 ghz gain 19 24 db input return loss 15 db output return loss 15 db output power for 1 db compression (p1db) 17 dbm output third order intercept (ip3) 25 dbm saturated output power (psat) 19 dbm supply current (idd1 + idd2 + idd3) 220 ma [1] unless otherwise indicated, all measurements are from probed die [2] adjust vgg1 = vgg2 = vgg3 between -1v to +0.3v (typ -0.3v) to achieve idd total = 220ma information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite.com linear & power amplifiers - chip 2 HMC-ABH241 v03.0412 gaas hemt mmic medium power amplifier, 50 - 66 ghz fixtured output power vs. frequency output return loss vs. frequency linear gain vs. frequency input return loss vs. frequency 0 5 10 15 20 25 30 48 50 52 54 56 58 60 62 64 66 68 gain (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 48 50 52 54 56 58 60 62 64 66 68 return loss (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 50 52 54 56 58 60 62 64 66 68 70 return loss (db) frequency (ghz) 0 5 10 15 20 25 50 52 54 56 58 60 62 64 66 68 p1db p3db pout (dbm) frequency (ghz) information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite.com linear & power amplifiers - chip 3 HMC-ABH241 v03.0412 gaas hemt mmic medium power amplifier, 50 - 66 ghz outline drawing absolute maximum ratings normal 5.0 v supply to gnd +5.5 vdc gate bias voltage -1 to +0.3 vdc rf input power (vdd = +5.0 v) 2 dbm storage temperature -65 c to + 150c max peak relow temperature +180 c electrostatic sensitive device observe handling precautions notes: 1. all dimensions are in inches [mm]. 2. typical bond pad is .004 square. 3. backside metallization: gold. 4. backside metal is ground. 5. bond pad metallization: gold. 6. connection not required for unlabeled bond pads. 7. overall die size .002 8. die thickness = 0.004 die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the ?packaging information? section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. reliability information junction temperature to maintain 1 million hour mttf +180 c normal junction temperature (t = +85 c) +140.6 c thermal resistance (junction to die bottom) +50.6 c/w operating temperature -55 c to + 85c information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite.com linear & power amplifiers - chip 4 HMC-ABH241 v03.0412 gaas hemt mmic medium power amplifier, 50 - 66 ghz pad number function description interface schematic 1 rfin this pad is ac coupled and matched to 50 ohms. 2, 4, 6, 10, 12, 14 vgg1, vgg2 vgg3 gate control for ampliier. please follow mmic ampliier biasing procedure application note. see assembly for required external components. 3, 5, 7, 9, 11, 13 vdd1, vdd2, vdd3 power supply voltage for the ampliier. see assembly for required external components. 8 rfout this pad is ac coupled and matched to 50 ohms. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite.com linear & power amplifiers - chip 5 HMC-ABH241 v03.0412 gaas hemt mmic medium power amplifier, 50 - 66 ghz assembly diagram note 1: bypass caps should be 100 pf (approximately) ceramic (single-la yer) placed no farther than 30 mils from the ampliier. note 2: best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons o n input and output. information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
for price, delivery and to place orders: hittite microwave corporation, 2 e lizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite .com application support: phone: 978-250-3343 or apps@hittite.com linear & power amplifiers - chip 6 HMC-ABH241 v03.0412 gaas hemt mmic medium power amplifier, 50 - 66 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note) . 50 ohm microstrip transmission lines on 0.127mm (5 mil) thic k alumina thin ilm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin ilm substra tes must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then atta ched to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec - tive containers, and then sealed in an esd protective bag for shipment . once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize indu ctive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp p air of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vac uum collet, tweezers, or ingers. mounting the chip is back-metallized and can be die mounted with ausn e utectic preforms or with electrically conductive epoxy. the mounting surface should be clean and lat. eutectic die attach: a 80/20 gold tin preform is recommended w ith a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, to ol tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so tha t a thin epoxy illet is observed around the perimeter of the chip once it is placed into position. cure epoxy per t he manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds sho uld be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermoso nically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams . all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic e nergy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0 .31 mm). 0.102mm (0.004?) thick gaas mmic ribbon bond 0.076mm (0.003?) rf ground plane 0.127mm (0.005?) thick alumina thin film substrate figure 1. 0.102mm (0.004?) thick gaas mmic ribbon bond 0.076mm (0.003?) rf ground plane 0.150mm (0.005?) thickmoly tab 0.254mm (0.010? thick alumina thin film substrate figure 2. information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se , no r for any infring em en ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an al og .com app li cation sup po rt: p ho ne: 1-800-analog-d
|
